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BC858BLT1G
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BC858BLT1G Datasheet PDF (7 Pages)
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BC858BLT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-100 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
220 @2mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BC858BLT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃

BC858BLT1G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
22 Pages / 1.31 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
1 Pages / 0.14 MByte

BC858BLT1 Documents

ON Semiconductor
SOT-23 PNP 30V 0.1A
Motorola
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
Leshan Radio
PNP Silicon General Purpose Transistors
Micro Commercial Components
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
SynSemi
Small Signal Bipolar Transistor, 0.1A I(C), PNP
Jiangsu Changjiang Electronics Technology
Transistor
ON Semiconductor
SOT-23 PNP 30V 0.1A
Leshan Radio
Small Signal Bipolar Transistor,
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