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BC859BLT1G
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BC859BLT1G Datasheet PDF (7 Pages)
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BC859BLT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-100 mA
Case/Package
SOT-23-3
Polarity
PNP
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
220 @2mA, 5V
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BC859BLT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

BC859BLT1G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
10 Pages / 0.21 MByte

BC859BLT1 Documents

ON Semiconductor
SOT-23 PNP 30V 0.1A
Leshan Radio
Small Signal Bipolar Transistor,
ON Semiconductor
SOT-23 PNP 30V 0.1A
Leshan Radio
Small Signal Bipolar Transistor,
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