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Part Datasheet Search > BJTs > Infineon > BC859CE6327HTSA1 Datasheet PDF
BC859CE6327HTSA1
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BC859CE6327HTSA1 Datasheet PDF (11 Pages)
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BC859CE6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-30.0 V
Current Rating
-100 mA
Case/Package
SOT-23-3
Polarity
PNP
Power Dissipation
330 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
420 @2mA, 5V
Input Power (Max)
330 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
330 mW

BC859CE6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

BC859CE6327HTSA1 Documents

Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.2 MByte

BC859CE6327 Documents

Infineon
SOT-23 PNP 30V 0.1A
Infineon
Bipolar Transistors - BJT Trans GP BJT PNP 30V 0.1A 3Pin
Infineon
SOT-23 PNP 30V 0.1A
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