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BCP56T3G
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BCP56T3G Datasheet PDF (5 Pages)
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BCP56T3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
130 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
80.0 V
Current Rating
1.00 A
Case/Package
TO-261-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
1A
hFE Min
40 @150mA, 2V
Input Power (Max)
1.5 W
DC Current Gain (hFE)
25
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1.5 W

BCP56T3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.5 mm
Size-Width
3.5 mm
Size-Height
1.63 mm
Operating Temperature
-65℃ ~ 150℃

BCP56T3G Documents

ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.06 MByte
ON Semiconductor
9 Pages / 0.53 MByte

BCP56T3 Documents

ON Semiconductor
SOT-223 NPN 80V 1A
Motorola
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin, CASE 318E-04, 4 PIN
ON Semiconductor
SOT-223 NPN 80V 1A
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