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Part Datasheet Search > BJTs > Infineon > BCR112E6327HTSA1 Datasheet PDF
BCR112E6327HTSA1
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BCR112E6327HTSA1 Datasheet PDF (8 Pages)
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BCR112E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
50.0 V
Current Rating
100 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
0.2 W
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
100mA
hFE Min
20 @5mA, 5V
Input Power (Max)
200 mW
DC Current Gain (hFE)
20
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
140 MHz
Power Dissipation (Max)
200 mW

BCR112E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm

BCR112E6327HTSA1 Documents

Infineon
8 Pages / 0.81 MByte
Infineon
34 Pages / 0.51 MByte
Infineon
34 Pages / 0.66 MByte

BCR112E6327 Documents

Infineon
SOT-23 NPN 50V 100mA
Infineon
TRANS PREBIAS NPN 0.2W SOT23-3
Infineon
NPN DIGI-TRANS.4,7K/4,7 SOT23 **
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Infineon
SOT-23 NPN 50V 100mA
Infineon
SOT-23 NPN 50V 100mA
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