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Part Datasheet Search > BJTs > Infineon > BCR116E6433HTMA1 Datasheet PDF
BCR116E6433HTMA1
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BCR116E6433HTMA1 Datasheet PDF (11 Pages)
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BCR116E6433HTMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
50.0 V
Current Rating
100 mA
Case/Package
SOT-23-3
Polarity
NPN
Power Dissipation
0.2 W
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
100mA
hFE Min
70 @5mA, 5V
Input Power (Max)
200 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
150 MHz
Power Dissipation (Max)
200 mW

BCR116E6433HTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
End of Life
Packaging
Tape & Reel (TR)

BCR116E6433HTMA1 Documents

Infineon
11 Pages / 0.84 MByte
Infineon
34 Pages / 0.51 MByte

BCR116E6433 Documents

Infineon
Trans Digital BJT NPN 50V 100mA 3Pin SOT-23 T/R
Infineon
SOT-23 NPN 50V 100mA
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Infineon
TRANS DIGITAL BJT NPN 50V 100mA 3SOT-23 T/R
Infineon
SOT-23 NPN 50V 100mA
Infineon
SOT-23 NPN 50V 100mA
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