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Part Datasheet Search > BJTs > Infineon > BCR523E6327HTSA1 Datasheet PDF
BCR523E6327HTSA1
$ 0.067
BCR523E6327HTSA1 Datasheet PDF (8 Pages)
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BCR523E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
50.0 V
Current Rating
500 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
330 mW
Breakdown Voltage (Collector to Emitter)
50 V
Continuous Collector Current
500mA
hFE Min
70 @50mA, 5V
Input Power (Max)
330 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
100 MHz
Power Dissipation (Max)
330 mW

BCR523E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.9 mm

BCR523E6327HTSA1 Documents

Infineon
8 Pages / 0.82 MByte
Infineon
61 Pages / 0.26 MByte
Infineon
34 Pages / 0.66 MByte

BCR523E6327 Documents

Infineon
SOT-23 NPN 50V 500mA
Infineon
Trans Digital BJT NPN 50V 500mA 3Pin SOT-23 T/R
Infineon
NPN DIGITAL-TRANS. 1K/10K SOT23 **
Infineon
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Infineon
SOT-23 NPN 50V 500mA
Infineon
SOT-23 NPN 50V 500mA
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