BCV49H6327XTSA1 Datasheet PDF - Infineon

●If you require a higher current gain value in your circuit, then the NPN BCV49H6327XTSA1 Darlington transistor, developed by Infineon Technologies, is for you. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.5@0.1mA@100mA V. This product"s maximum continuous DC collector current is 0.5 A, while its minimum DC current gain is 10000@100mA@5V|2000@100uA@1 V|2000@500mA@5V|4000@10mA@5V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.