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Part Datasheet Search > Diodes > Infineon > BCV61CE6327HTSA1 Datasheet PDF
BCV61CE6327HTSA1
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BCV61CE6327HTSA1 Datasheet PDF (7 Pages)
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BCV61CE6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
250 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
30.0 V
Current Rating
100 mA
Case/Package
TO-253-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
30 V
Continuous Collector Current
0.1A
hFE Min
100
DC Current Gain (hFE)
520
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
300 mW
Voltage Rating
30 V

BCV61CE6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm

BCV61CE6327HTSA1 Documents

Infineon
7 Pages / 0.51 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
34 Pages / 0.2 MByte
Infineon
34 Pages / 0.66 MByte

BCV61CE6327 Documents

Infineon
SOT-143 NPN 30V 0.1A
Infineon
Trans GP BJT NPN 30V 0.1A 4Pin(3+Tab) SOT-143 T/R
Infineon
NPN DUAL-TRANS.30V 0,1A SOT143 **
Nexperia
Transistor NPN/NPN Current Mirror SOT143
Infineon
SOT-143 NPN 30V 0.1A
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