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BCW33LT1G
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BCW33LT1G Datasheet PDF (6 Pages)
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BCW33LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
32.0 V
Current Rating
100 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
300 mW
Breakdown Voltage (Collector to Emitter)
32 V
Continuous Collector Current
0.1A
hFE Min
420 @2mA, 5V
hFE Max
800
Input Power (Max)
225 mW
DC Current Gain (hFE)
420
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BCW33LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BCW33LT1G Documents

ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte

BCW33LT1 Documents

ON Semiconductor
SOT-23 NPN 32V 0.1A
Motorola
TRANS NPN 32V 0.1A SOT-23
Leshan Radio
General Purpose Transistors(NPN Silicon)
ON Semiconductor
SOT-23 NPN 32V 0.1A
Leshan Radio
Transistor,
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