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BCW66GLT1G
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BCW66GLT1G Datasheet PDF (7 Pages)
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BCW66GLT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
45.0 V
Current Rating
800 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
330 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.8A
hFE Min
160 @100mA, 1V
Input Power (Max)
300 mW
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BCW66GLT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

BCW66GLT1G Documents

ON Semiconductor
7 Pages / 0.37 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.07 MByte

BCW66GLT1 Documents

ON Semiconductor
SOT-23 NPN 45V 0.8A
ON Semiconductor
SOT-23 NPN 45V 0.8A
Leshan Radio
Small Signal Bipolar Transistor, 0.8A I(C), NPN
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