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BCW68GLT1G
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BCW68GLT1G Datasheet PDF (5 Pages)
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BCW68GLT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
100 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-800 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
225 mW
Gain Bandwidth Product
100 MHz
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.8A
hFE Min
120 @10mA, 1V
Input Power (Max)
225 mW
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BCW68GLT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
3.04 mm
Size-Width
2.64 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃

BCW68GLT1G Documents

ON Semiconductor
5 Pages / 0.06 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
4 Pages / 0.08 MByte

BCW68GLT1 Documents

ON Semiconductor
SOT-23 PNP 45V 0.8A
Leshan Radio
General Purpose Transistors(PNP Silicon)
Motorola
General Purpose Transistor
ON Semiconductor
SOT-23 PNP 45V 0.8A
Leshan Radio
Transistor,
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