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BCW70LT1G
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BCW70LT1G Datasheet PDF (7 Pages)
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BCW70LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-45.0 V
Current Rating
-100 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
0.1A
hFE Min
215 @2mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
215
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

BCW70LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BCW70LT1G Documents

ON Semiconductor
7 Pages / 0.34 MByte
ON Semiconductor
14 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.17 MByte

BCW70LT1 Documents

ON Semiconductor
SOT-23 PNP 45V 0.1A
Leshan Radio
General Purpose Transistors(PNP Silicon)
Motorola
General Purpose Transistors
ON Semiconductor
SOT-23 PNP 45V 0.1A
Leshan Radio
Transistor,
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