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Part Datasheet Search > BJTs > Diodes > BCX5616QTA Datasheet PDF
BCX5616QTA
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BCX5616QTA Datasheet PDF (7 Pages)
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BCX5616QTA Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
150 MHz
Number of Pins
4 Pin
Case/Package
SOT-89
Polarity
NPN
Power Dissipation
2 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
1A
hFE Min
100 @150mA, 2V
Input Power (Max)
2 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1000 mW

BCX5616QTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-65℃ ~ 150℃ (TJ)

BCX5616QTA Documents

Diodes
7 Pages / 0.37 MByte
Diodes
199 Pages / 0.86 MByte
Diodes
7 Pages / 0.3 MByte

BCX5616 Documents

NXP
Bipolar (BJT) Single Transistor, NPN, 80V, 180MHz, 0.5W(1/2W), 1A, 100
Infineon
N/A Infineon Technologies NPN Case type SOT 89Infineon Technologies NPN Case type SOT 89
Nexperia
Bipolar (BJT) Single Transistor, NPN, 80V, 180MHz, 0.5W(1/2W), 1A, 100
Multicomp
MULTICOMP BCX56-16 Bipolar (BJT) Single Transistor, NPN, 80V, 0.5W(1/2W), 1A, 250
Philips
Trans GP BJT NPN 80V 1A 4Pin(3+Tab) SOT-89
Infineon
INF SMT NPN transistor BCX5616 1AIc 2Vce
Zetex
NPN Med Power Transistor
Central Semiconductor
Trans GP BJT NPN 80V 1A 4Pin(3+Tab) SOT-89
Micro Commercial Components
NPN Plastic-Encapsulate Transistors
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