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BD139-10 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-126-3

Description:

Trans GP BJT NPN 80V 3A 1250mW 3Pin(3+Tab) SOT-32 Tube

Pictures:

3D Model

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Product Pictures

Documentation:

BD139-10 Datasheet (9 Pages)

Package Outline Dimension on6 Page 7 Page

BD139-10 Datasheet PDF (9 Pages)

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BD139-10 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-126-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

1.25 W

Breakdown Voltage (Collector to Emitter)

80 V

hFE Min

40 @150mA, 2V

Input Power (Max)

1.25 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

1250 mW

View Datasheet >

BD139-10 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Material

Silicon

Size-Length

7.8 mm

Size-Width

2.7 mm

Size-Height

10.8 mm

Operating Temperature

150℃ (TJ)

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BD139-10 Environmental

BD139-10 Export Classifications

BD139-10 Function Overview

BD139-10 Documents

BD139-10 Datasheet

ST Microelectronics

9 Pages / 0.14 MByte

BD139-10 Other Datasheet PDF

ST Microelectronics

10 Pages / 0.14 MByte

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