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BD139G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-126-3

Description:

TO-225 NPN 80V 1.5A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BD139G Datasheet (5 Pages)

Package Outline Dimension on4 Page

Part Numbering System on1 Page

BD139G Datasheet PDF (5 Pages)

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BD139G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

80.0 V

Current Rating

1.50 A

Case/Package

TO-126-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

1.25 W

Breakdown Voltage (Collector to Emitter)

80 V

Continuous Collector Current

1.5A

hFE Min

Input Power (Max)

1.25 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1250 mW

View Datasheet >

BD139G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Length

7.74 mm

Size-Width

2.66 mm

Size-Height

11.04 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

View Datasheet >

BD139G Environmental

BD139G Export Classifications

BD139G Function Overview

BD139G Documents

BD139G Datasheet

ON Semiconductor

5 Pages / 0.13 MByte

BD139G Other Datasheet PDF

ON Semiconductor

8 Pages / 0.23 MByte

BD139G Notice File

ON Semiconductor

3 Pages / 0.1 MByte

BD139G Other References

ON Semiconductor

1 Pages / 0.13 MByte

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12.5W Switching NPN Plastic Leaded Transistor. 80V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD140

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UTC

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EPITAXIAL PLANAR NPN TRANSISTOR

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