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Part Datasheet Search > BJTs > ON Semiconductor > BD237G Datasheet PDF
BD237G
$ 0.379
BD237G Datasheet PDF (5 Pages)
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BD237G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
2.00 A
Case/Package
TO-126-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
25 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
2A
hFE Min
25 @1A, 2V
Input Power (Max)
25 W
DC Current Gain (hFE)
3
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
25000 mW

BD237G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃

BD237G Documents

ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.03 MByte

BD237 Documents

ST Microelectronics
Trans GP BJT NPN 80V 2A 25000mW 3Pin(3+Tab) SOT-32 Tube
CJ
TO-126 NPN 80V 2000mA
ON Semiconductor
TO-225-3 NPN 80V 2A
Multicomp
MULTICOMP BD237 Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 80V, 3MHz, 25W, 2A, 40
Philips
Transistor,
Motorola
Plastic Medium Power Silicon NPN Transistor)
Fairchild
NPN Epitaxial Silicon Transistor
Central Semiconductor
Trans GP BJT NPN 80V 2A 3Pin(3+Tab) TO-126 Box
Micro Commercial Components
TO-126 Plastic-Encapsulate Biploar Transistors
Continental Device
25W Switching NPN Plastic Leaded Transistor. 80V Vceo, 2A Ic, 25 hFE.
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