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Part Datasheet Search > BJTs > ON Semiconductor > BD243B Datasheet PDF
BD243B
$ 0.22
BD243B Datasheet PDF (6 Pages)
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BD243B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
3 MHz
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
65 W
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
15 @3A, 4V
Input Power (Max)
65 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
65000 mW

BD243B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bag
Material
Silicon
Operating Temperature
150℃ (TJ)

BD243B Documents

ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
6 Pages / 0.09 MByte

BD243 Documents

Bourns J.W. Miller
Bipolar Transistors - BJT 65W NPN Silicon
Boca Semiconductor
Trans GP BJT NPN 45V 6A 3Pin(3+Tab) TO-220
Continental Device
65W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 6A Ic, 30 hFE.
Fairchild
NPN Epitaxial Silicon Transistor
ST Microelectronics
6A, 45V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN
ON Semiconductor
6.0 A, 100 V NPN Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE
Rectron Semiconductor
Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Motorola
Transistor
Samsung
Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
National Semiconductor
TRANSISTOR,BJT,NPN,45V V(BR)CEO,8A I(C),TO-220AB
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