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BD436 Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-126-3

Description:

Trans GP BJT PNP 32V 4A 36000mW 3Pin(3+Tab) SOT-32 Tube

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BD436 Datasheet (4 Pages)BD436 Application Note (4 Pages)

BD436 Datasheet PDF (4 Pages)

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BD436 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

3 MHz

Number of Pins

3 Pin

Case/Package

TO-126-3

Number of Positions

3 Position

Polarity

PNP

Power Dissipation

36 W

Breakdown Voltage (Collector to Emitter)

32 V

hFE Min

40 @10mA, 5V

Input Power (Max)

36 W

DC Current Gain (hFE)

140

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

36000 mW

View Datasheet >

BD436 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Rail, Tube

Material

Silicon

Operating Temperature

150℃ (TJ)

View Datasheet >

BD436 Environmental

BD436 Export Classifications

BD436 Function Overview

BD436 Documents

BD436 Datasheet

ST Microelectronics

4 Pages / 0.04 MByte

BD436 Other Datasheet PDF

ST Microelectronics

7 Pages / 0.14 MByte

BD436 Application Note

ST Microelectronics

4 Pages / 0.07 MByte

BD436 Notice File

ST Microelectronics

6 Pages / 0.01 MByte

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