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BD679A Datasheet PDF - ST Microelectronics

Manufacturer:

ST Microelectronics

Category:

BJTs

Case Package:

TO-126-3

Description:

Trans Darlington NPN 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

BD679A Datasheet (12 Pages)

Package Outline Dimension on9 Page 10 Page

BD679A Application Note (4 Pages)

BD679A Datasheet PDF (12 Pages)

View Datasheet

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BD679A Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

80.0 V

Current Rating

4.00 A

Case/Package

TO-126-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

40 W

Breakdown Voltage (Collector to Emitter)

80 V

hFE Min

750

Input Power (Max)

40 W

DC Current Gain (hFE)

750

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

40000 mW

View Datasheet >

BD679A Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Size-Length

7.8 mm

Size-Width

2.7 mm

Size-Height

10.8 mm

Operating Temperature

150℃ (TJ)

View Datasheet >

BD679A Environmental

BD679A Export Classifications

BD679A Function Overview

BD679A Documents

BD679A Datasheet

ST Microelectronics

12 Pages / 0.36 MByte

BD679A Other Datasheet PDF

ST Microelectronics

13 Pages / 0.35 MByte

BD679A Application Note

ST Microelectronics

4 Pages / 0.07 MByte

BD679 Documents

BD679 Datasheet PDF

ST Microelectronics

Trans Darlington NPN 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube

BD679 Datasheet PDF

ON Semiconductor

TO-225-3 NPN 80V 4A

BD679 Datasheet PDF

Multicomp

MULTICOMP BD679 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 40W, 4A, 750

BD679 Datasheet PDF

Magnatec

BD679 Datasheet PDF

Central Semiconductor

Trans Darlington NPN 80V 4A 40000mW 3Pin(3+Tab) TO-126 Box

BD679 Datasheet PDF

National Semiconductor

TRANSISTOR,BJT,DARLINGTON,NPN,80V V(BR)CEO,4A I(C),TO-126

BD679 Datasheet PDF

Fairchild

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD679 Datasheet PDF

Samsung

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

BD679 Datasheet PDF

BD679

BD679 Datasheet PDF

Continental Device

40W Darlington NPN Plastic Leaded Transistor. 80V Vceo, 4A Ic, 750 hFE. Complementary BD680

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