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Part Datasheet Search > BJTs > ON Semiconductor > BD809G Datasheet PDF
BD809G
$ 1.039
BD809G Datasheet PDF (4 Pages)
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BD809G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
1.5 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
10.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
90 W
Gain Bandwidth Product
1.5 MHz
Breakdown Voltage (Collector to Base)
80.0 V
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
10A
hFE Min
15 @4A, 2V
Input Power (Max)
90 W
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
90000 mW

BD809G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
10.28 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BD809G Documents

ON Semiconductor
4 Pages / 0.08 MByte
ON Semiconductor
5 Pages / 0.09 MByte

BD809 Documents

ON Semiconductor
TO-220-3 NPN 80V 10A
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10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90W
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Silicon NPN Power Transistors TO-220C packageE
Iskra
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Inchange Semiconductor
Silicon NPN Power Transistors
Glenair
Circular Connector,
ON Semiconductor
TO-220AB NPN 80V 10A
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