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BDP948E6433HTMA1
$ 9.722
BDP948E6433HTMA1 Datasheet PDF (8 Pages)
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BDP948E6433HTMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
TO-261-4
Polarity
PNP
Breakdown Voltage (Collector to Emitter)
45 V
Continuous Collector Current
3A
hFE Min
85 @500mA, 1V
Input Power (Max)
5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
5 W

BDP948E6433HTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

BDP948E6433HTMA1 Documents

Infineon
8 Pages / 0.51 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
7 Pages / 0.05 MByte

BDP948E6433 Documents

Infineon
TRANS PNP 45V 3A SOT-223
Siemens Semiconductor
RF Power Bipolar Transistor, 1-Element, Silicon, PNP
Infineon
RF Power Bipolar Transistor, 1-Element, Silicon, PNP,
Infineon
SOT-223 PNP 45V 3A
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