BDV65B Datasheet PDF - ON Semiconductor

●The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.

●Features

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● High DC Current Gain HFE = 1000 (min.) @ 5 Adc

● Monolithic Construction with Built-in Base Emitter Shunt Resistors

● These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.