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Part Datasheet Search > BJTs > Bourns J.W. Miller > BDV65C-S Datasheet PDF
BDV65C-S
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BDV65C-S Datasheet PDF (4 Pages)
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BDV65C-S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-218-3
Polarity
NPN
Breakdown Voltage (Collector to Emitter)
120 V
Continuous Collector Current
12A
hFE Min
1000 @5A, 4V
Input Power (Max)
3.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
125000 mW

BDV65C-S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Operating Temperature
-65℃ ~ 150℃ (TJ)

BDV65C-S Documents

Bourns J.W. Miller
4 Pages / 0.1 MByte
Bourns J.W. Miller
1 Pages / 0.07 MByte

BDV65 Documents

Bourns J.W. Miller
Power Bipolar Transistor, 12A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, FM-3
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t-Npn Si- High Pwr Darl
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Central Semiconductor
Leaded Power Transistor Darlington
Motorola
10A, 100V, NPN, Si, POWER TRANSISTOR, TO-218
New Jersey Semiconductor
Trans Darlington NPN 60V 20A 3Pin(3+Tab) TO-247
Mospec
POWER TRANSISTORS(12A,125W)A
Inchange Semiconductor
Transistor
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