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Part Datasheet Search > BJTs > ON Semiconductor > BDW47G Datasheet PDF
BDW47G
$ 0.104
BDW47G Datasheet PDF (7 Pages)
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BDW47G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-15.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
85 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
15A
hFE Min
1000 @5A, 4V
Input Power (Max)
85 W
DC Current Gain (hFE)
1000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
4MHz (Min)
Power Dissipation (Max)
85000 mW

BDW47G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
10.53 mm
Size-Width
4.83 mm
Size-Height
15.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

BDW47G Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
20 Pages / 2.6 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
5 Pages / 0.15 MByte
ON Semiconductor
1 Pages / 0.13 MByte

BDW47 Documents

ON Semiconductor
TO-220-3 PNP 100V 15A
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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Continental Device
PNP Silicon Planar Darlington Power Transistor
ON Semiconductor
TO-220AB PNP 100V 15A
ON Semiconductor
Power 15A 80V-100V NPN 85W , Package: TO-220, Pins=3
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