BDX34B Datasheet PDF - ON Semiconductor

●The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

●Features

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● High DC Current Gain -

●hFE = 2500 (typ.) at IC = 4.0

● Collector-Emitter Sustaining Voltage at 100 mAdc

●VCEO(sus) = 80 Vdc (min.) BDX33B, 34B

●VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C

● Low Collector-Emitter Saturation Voltage

●CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C

● Monolithic Construction with Build-In Base-Emitter Shunt resistors

● TO-220AB Compact Package

● Pb-Free Packages are Available