BF996S Datasheet PDF - NXP

●N-channel dual-gate MOS-FET DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. FEATURES • Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such as: – UHF television tuners – Professional communication equipment. DESCRIPTION Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate.