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Part Datasheet Search > MOSFETs > Infineon > BF998E6327HTSA1 Datasheet PDF
BF998E6327HTSA1
$ 0.104
BF998E6327HTSA1 Datasheet PDF (9 Pages)
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BF998E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
45 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
12.0 V
Current Rating
30.0 mA
Case/Package
TO-253-4
Number of Positions
4 Position
Polarity
N-Channel
Power Dissipation
200 mW
Drain to Source Voltage (Vds)
12 V
Continuous Drain Current (Ids)
300 mA
Gain
28 dB
Test Current
10 mA
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200 mW
Voltage Rating
12 V

BF998E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1 mm
Size-Height
1.3 mm
Operating Temperature
-55℃ ~ 150℃

BF998E6327HTSA1 Documents

Infineon
9 Pages / 0.08 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.08 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
1 Pages / 0.15 MByte

BF998E6327 Documents

Infineon
Transistor: N-MOSFET; unipolar; RF; 12V; 30mA; 200mW; SOT143; SMT
Infineon
Trans RF MOSFET N-CH 12V 0.03A 4Pin(3+Tab) SOT-143 T/R
Infineon
N-CH MOS TETRO 12V 30mA SOT143 **
Siemens Semiconductor
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Infineon
Trans RF MOSFET N-CH 12V 0.03A Automotive 4Pin(3+Tab) SOT-143 T/R
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