BFG520W Datasheet PDF - NXP

●DESCRIPTION

●NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package.

●FEATURES

●• High power gain

●• Low noise figure

●• High transition frequency

●• Gold metallization ensures excellent reliability.

●APPLICATIONS

●RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems.