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Part Datasheet Search > BJTs > Infineon > BFP196WH6327XTSA1 Datasheet PDF
BFP196WH6327XTSA1
$ 0.064
BFP196WH6327XTSA1 Datasheet PDF (6 Pages)
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BFP196WH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
7500 MHz
Number of Pins
4 Pin
Case/Package
SOT-343-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
700 mW
Input Capacitance
3.9 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
12.5dB ~ 19dB
hFE Min
70 @50mA, 8V
Input Power (Max)
700 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
700 mW

BFP196WH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
150℃ (TJ)

BFP196WH6327XTSA1 Documents

Infineon
6 Pages / 0.53 MByte
Infineon
7 Pages / 0.52 MByte
Infineon
1 Pages / 0.13 MByte

BFP196WH6327 Documents

Infineon
INFINEON BFP 196W H6327 Bipolar - RF Transistor, NPN, 12V, 7.5GHz, 700mW, 150mA, 70
Infineon
Transistor: NPN; bipolar; RF; 20V; 150mA; 700mW; SOT343
Infineon
NPN RF-Trans. 12V 150mA SOT343 **
Infineon
Trans RF BJT NPN 12V 0.15A 700mW Automotive 4Pin(3+Tab) SOT-343 T/R
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