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Part Datasheet Search > BJTs > Infineon > BFP420H6327XTSA1 Datasheet PDF
BFP420H6327XTSA1
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BFP420H6327XTSA1 Datasheet PDF (9 Pages)
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BFP420H6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
25000 MHz
Number of Pins
4 Pin
Case/Package
SOT-343-4
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
210 mW
Breakdown Voltage (Collector to Emitter)
5 V
Gain
21 dB
hFE Min
60 @20mA, 4V
Input Power (Max)
160 mW
DC Current Gain (hFE)
95
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
210 mW

BFP420H6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.8 mm
Operating Temperature
150℃ (TJ)

BFP420H6327XTSA1 Documents

Infineon
9 Pages / 0.54 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.52 MByte
Infineon
19 Pages / 1.01 MByte
Infineon
1 Pages / 0.13 MByte

BFP420H6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 4.5V; 35mA; 160mW; SOT343
Infineon
Trans RF BJT NPN 4.5V 0.06A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
NPN RF-Trans. 4V 25mA SOT343 **
Infineon
Trans RF BJT NPN 4.5V 0.06A 210mW Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.06A Automotive 4Pin(3+Tab) SOT-343 T/R
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