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BFP 540 E6327
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BFP 540 E6327 Datasheet PDF (11 Pages)
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BFP 540 E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-343-4
Power Dissipation
250 mW
Gain Bandwidth Product
30000 MHz
Breakdown Voltage (Collector to Emitter)
5 V
Gain
21.5 dB
hFE Min
50
hFE Max
50 @20mA, 3.5V
Input Power (Max)
250 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
65 ℃

BFP 540 E6327 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
65℃ ~ 150℃

BFP 540 E6327 Documents

Infineon
11 Pages / 0.55 MByte

BFP540 Documents

Infineon
Trans RF BJT NPN 4.5V 0.08A Automotive 4Pin(3+Tab) SOT-343 T/R
NXP
TRANSISTOR S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
Philips
Transistor
Sanyo Semiconductor
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon, NPN, ECSP1008-4, 4 PIN
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin TSFP T/R
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.08A 0.25W(1/4W) Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Trans RF BJT NPN 4.5V 0.08A Automotive 4Pin(3+Tab) SOT-343 T/R
Infineon
Transistor: NPN; bipolar; RF; 4.5V; 80mA; 0.25W(1/4W); SOT343
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