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BFP 540ESD H6327 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

BJTs

Case Package:

SOT-343

Description:

INFINEON BFP 540ESD H6327 Bipolar - RF Transistor, NPN, 4.5V, 30GHz, 0.25W(1/4W), 80mA, 50

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Documentation:

BFP 540ESD H6327 Datasheet (9 Pages)

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BFP 540ESD H6327 Datasheet PDF (9 Pages)

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BFP 540ESD H6327 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-343

Power Rating

0.25 W

Number of Positions

4 Position

Polarity

NPN

Power Dissipation

250 mW

Input Capacitance

0.59 pF

Breakdown Voltage (Collector to Emitter)

5 V

Gain

21.5 dB

hFE Min

hFE Max

170

Input Power (Max)

250 mW

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

250 mW

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BFP 540ESD H6327 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Material

Silicon

Operating Temperature

-65℃ ~ 150℃

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BFP 540ESD H6327 Environmental

BFP 540ESD H6327 Documents

BFP 540ESD H6327 Datasheet

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9 Pages / 0.6 MByte

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