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Part Datasheet Search > BJTs > Infineon > BFP640FH6327XTSA1 Datasheet PDF
BFP640FH6327XTSA1
$ 0.171
BFP640FH6327XTSA1 Datasheet PDF (28 Pages)
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BFP640FH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SMD-4
Number of Positions
4 Position
Power Dissipation
200 mW
Input Capacitance
0.47 pF
Breakdown Voltage (Collector to Emitter)
4.5 V
Gain
23 dB
hFE Min
110 @30mA, 3V
Input Power (Max)
200 mW
DC Current Gain (hFE)
110
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200 mW

BFP640FH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

BFP640FH6327XTSA1 Documents

Infineon
28 Pages / 1.39 MByte
Infineon
10 Pages / 0.23 MByte
Infineon
29 Pages / 1.18 MByte
Infineon
8 Pages / 0.26 MByte

BFP640FH6327 Documents

Infineon
Trans RF BJT NPN 4.1V 0.05A Automotive 4Pin TSFP T/R
Infineon
Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4Pin TSFP T/R
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