BFP640H6327XTSA1 Datasheet PDF - Infineon

●The BFP 640 H6327 is a NPN low-noise Bipolar RF Transistor based on Infineon"s reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 10mA this device supports energy efficient designs. The typical transition frequency is approximately 40GHz, hence the device offers high power gain at frequencies up to 8GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

● Linear low-noise wide band transistor

● High linearity

● High transition frequency

● Low power consumption

● Easy to use

● Halogen-free