BFP740ESDH6327XTSA1 Datasheet PDF - Infineon

● Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology

● 2 kV ESD robustness (HBM) due to integrated protection circuits

● High maximum RF input power of 21 dBm

● 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 6 mA

● 25.5 dB maximum gain Gms typical at 2.4 GHz, 18.5 dB Gma at 5.5 GHz, 25 mA

● 24 dBm OIP3 typical at 5.5 GHz, 25 mA

● Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads

● Qualification report according to AEC-Q101 available