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Part Datasheet Search > BJTs > Infineon > BFR 106 E6327 Datasheet PDF
BFR 106 E6327
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BFR 106 E6327 Datasheet PDF (8 Pages)
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BFR 106 E6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
15.0 V
Current Rating
210 mA
Case/Package
SOT-23-3
Power Rating
0.7 W
Power Dissipation
700 mW
Breakdown Voltage (Collector to Emitter)
15 V
Gain
8.5dB ~ 13dB
hFE Min
70 @70mA, 8V
Input Power (Max)
700 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
700 mW

BFR 106 E6327 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm
Operating Temperature
150℃ (TJ)

BFR 106 E6327 Documents

Infineon
8 Pages / 0.6 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
8 Pages / 0.59 MByte

BFR106 Documents

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NXP BFR106 Bipolar - RF Transistor, NPN, 15V, 5GHz, 0.5W(1/2W), 100mA, 80 hFE
Infineon
NPN Silicon RF Transistor
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NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)
Philips
NPN 5GHz wideband transistor
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
New Jersey Semiconductor
Trans GP BJT NPN 15V 0.1A 3Pin TO-236AB
Infineon
Trans RF BJT NPN 16V 0.21A 700mW Automotive 3Pin SOT-23 T/R
NXP
Trans RF BJT NPN 15V 0.1A 0.5W(1/2W) 3Pin TO-236AB T/R
Infineon
Trans RF BJT NPN 16V 0.21A Automotive 3Pin SOT-23 T/R
Infineon
Trans GP BJT NPN 16V 0.21A 3Pin SOT-23 T/R
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