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Part Datasheet Search > BJTs > Infineon > BFR106E6327HTSA1 Datasheet PDF
BFR106E6327HTSA1
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BFR106E6327HTSA1 Datasheet PDF (8 Pages)
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BFR106E6327HTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
5000 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
15.0 V
Current Rating
210 mA
Case/Package
SOT-23-3
Number of Positions
3 Position
Power Dissipation
700 mW
Breakdown Voltage (Collector to Emitter)
15 V
Gain
8.5dB ~ 13dB
hFE Min
70 @70mA, 8V
Input Power (Max)
700 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
700 mW

BFR106E6327HTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

BFR106E6327HTSA1 Documents

Infineon
8 Pages / 0.6 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.59 MByte
Infineon
8 Pages / 0.5 MByte
Infineon
1 Pages / 0.13 MByte

BFR106E6327 Documents

Infineon
Trans RF BJT NPN 16V 0.21A Automotive 3Pin SOT-23 T/R
Infineon
Trans GP BJT NPN 16V 0.21A 3Pin SOT-23 T/R
Infineon
NPN HF-TRANS. 15V 0,1A SOT23 L **
Siemens Semiconductor
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Silicon, NPN
Infineon
Trans RF BJT NPN 16V 0.21A 700mW Automotive 3Pin SOT-23 T/R
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