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Part Datasheet Search > BJTs > Infineon > BFR182WH6327XTSA1 Datasheet PDF
BFR182WH6327XTSA1
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BFR182WH6327XTSA1 Datasheet PDF (6 Pages)
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BFR182WH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-323-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
250 mW
Input Capacitance
0.8 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
19 dB
hFE Min
70 @10mA, 8V
Input Power (Max)
250 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
250 mW

BFR182WH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.9 mm
Operating Temperature
150℃ (TJ)

BFR182WH6327XTSA1 Documents

Infineon
6 Pages / 0.65 MByte
Infineon
7 Pages / 0.5 MByte
Infineon
14 Pages / 0.99 MByte
Infineon
1 Pages / 0.13 MByte

BFR182WH6327 Documents

Infineon
INFINEON BFR 182W H6327 Bipolar - RF Transistor, NPN, 12V, 8GHz, 0.25W(1/4W), 35mA, 70
Infineon
TRANS RF NPN 12V 35mA SOT323
Infineon
Trans RF BJT NPN 12V 0.035A 0.25W(1/4W) Automotive 3Pin SOT-323 T/R
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