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Part Datasheet Search > BJTs > Infineon > BFR193FH6327XTSA1 Datasheet PDF
BFR193FH6327XTSA1
$ 0.083
BFR193FH6327XTSA1 Datasheet PDF (6 Pages)
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BFR193FH6327XTSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
8000 MHz
Number of Pins
3 Pin
Case/Package
PG-TSFP-3
Number of Positions
3 Position
Power Dissipation
580 mW
Input Capacitance
2.25 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
12.5 dB
hFE Min
70 @30mA, 8V
Input Power (Max)
580 mW
DC Current Gain (hFE)
70
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
580 mW

BFR193FH6327XTSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
150℃ (TJ)

BFR193FH6327XTSA1 Documents

Infineon
6 Pages / 0.52 MByte
Infineon
7 Pages / 0.51 MByte
Infineon
1 Pages / 0.13 MByte

BFR193FH6327 Documents

Infineon
Transistor: NPN; bipolar; RF; 20V; 80mA; 580mW; TSFP-3
Infineon
Trans RF BJT NPN 12V 0.08A Automotive 3Pin TSFP T/R
Infineon
Trans RF BJT NPN 12V 0.08A 3Pin TSFP T/R
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