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Part Datasheet Search > BJTs > Infineon > BFS17PE6327 Datasheet PDF
BFS17PE6327
$ 0.039
BFS17PE6327 Datasheet PDF (7 Pages)
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BFS17PE6327 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Power Dissipation
280 mW
Input Capacitance
0.9 pF
hFE Min
40
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
280 mW

BFS17PE6327 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.9 mm

BFS17PE6327 Documents

Infineon
7 Pages / 0.5 MByte

BFS17 Documents

NXP
Trans GP BJT NPN 15V 0.025A 3Pin TO-236AB
ROHM Semiconductor
VHigh Frequency/UHigh Frequency, Mixer/Oscillator, 25V, 25mA, 300mW, B= 90, 1GHz
Philips
Trans GP BJT NPN 15V 0.025A 3Pin TO-236AB
Micro Commercial Components
Trans GP BJT NPN 15V 0.025A 3Pin SOT-23
Infineon
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-23, 3 PIN
Motorola
Transistor
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RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Vishay Semiconductor
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3
Vishay Intertechnology
Transistor,
Siemens Semiconductor
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
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