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BFU550XRR Datasheet PDF - NXP

Manufacturer:

NXP

Category:

BJTs

Case Package:

SOT-143-4

Description:

12V 11GHz NPN 450mW 21.5dB Gain Wideband Silicon RF Transistor - SOT143R

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BFU550XRR Datasheet PDF (22 Pages)

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BFU550XRR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-143-4

Number of Positions

4 Position

Power Dissipation

450 mW

Input Capacitance

0.87 pF

Breakdown Voltage (Collector to Emitter)

12 V

Gain

21.5 dB

hFE Min

60 @15mA, 8V

hFE Max

200

Input Power (Max)

450 mW

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

450 mW

BFU550XRR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Operating Temperature

-40℃ ~ 150℃

BFU550XRR Environmental

BFU550XRR Export Classifications

BFU550XRR Function Overview

BFU550XRR Documents

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22 Pages / 0.3 MByte

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