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BFU590QX
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BFU590QX Datasheet PDF (19 Pages)
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BFU590QX Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-89-3
Number of Positions
3 Position
Power Dissipation
2 W
Input Capacitance
3.6 pF
Breakdown Voltage (Collector to Emitter)
12 V
Gain
6.5 dB
hFE Min
60 @80mA, 8V
Input Power (Max)
2 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2000 mW

BFU590QX Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-40℃ ~ 150℃ (TJ)

BFU590QX Documents

NXP
19 Pages / 0.24 MByte
NXP
5 Pages / 0.3 MByte
NXP
3 Pages / 0.21 MByte

BFU590 Documents

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Trans GP BJT NPN 16V 0.3A Automotive 4Pin(3+Tab) SOT-89
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NPN wideband silicon RF transistor
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