BGS12PL6E6327XTSA1 Datasheet PDF - Infineon

●The BGS 12PL6 E6327 is a general purpose RF CMOS Power SPDT Switch is designed to cover a broad range of high power applications from 30MHz to 4GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The symmetric design of its single pole double throw configuration offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1dB compression point exceeds the switch"s maximum input power level of 35dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.36dB in the 1GHz, 0.46dB in the 2GHz and 0.6dB in the 3GHz range. The BGS12PL6 RF switch is manufactured in Infineon"s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

● 2 high-linearity TRx paths with power handling capability of up to 35dBm

● All ports fully symmetrical

● Low insertion loss

● Low harmonic generation

● High port-to-port isolation

● 0.1 to 4GHz coverage

● High ESD robustness

● On-chip control logic

● No decoupling capacitors required if no DC applied on RF lines