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BPW77NA
$ 1.481

BPW77NA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
70.0 V
Operating Voltage
5.00 V
Case/Package
TO-18
Rise/Fall Time
6000 ns
Number of Channels
1 Channel
Number of Positions
3 Position
Wavelength
850 nm
Viewing Angle
10°
Peak Wavelength
850 nm
Polarity
NPN
Power Dissipation
250 mW
Power Consumption
250 mW
Rise Time
6 µs
Breakdown Voltage (Collector to Emitter)
70 V
Input Power (Max)
250 mW
Fall Time
5 µs
Operating Temperature (Max)
125 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
250 mW

BPW77NA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Material
Silicon
Size-Length
5.5 mm
Size-Width
5.5 mm
Size-Height
6.15 mm
Operating Temperature
-40℃ ~ 125℃

BPW77NA Documents

Vishay Semiconductor
5 Pages / 0.13 MByte
Vishay Semiconductor
5 Pages / 0.13 MByte
Vishay Semiconductor
3 Pages / 0.13 MByte
Vishay Semiconductor
6 Pages / 0.08 MByte
Vishay Semiconductor
1 Pages / 0.16 MByte

BPW77 Documents

Vishay Semiconductor
Silicon NPN Phototransistor
VISHAY
Phototransistor, 850nm, 10°, 0.25W(1/4W), 3Pins, TO-18
VISHAY
BPW77NA Series ±10° Sensitivity Through Hole NPN Silicon Phototransistor - TO-18
Vishay Semiconductor
VISHAY BPW77NA Phototransistor, 850nm, 10°, 0.25W(1/4W), 3Pins, TO-18
Vishay Semiconductor
VISHAY BPW77NB Phototransistor, 850nm, 10°, 0.25W(1/4W), 3Pins, TO-18
Vishay Siliconix
NPN Phototransistor 850nm 10deg TO-206AA
VISHAY
Silicon NPN Phototransistor
Vishay Semiconductor
Silicon NPN Phototransistor
ATMEL
Photo Transistor, 850nm, HERMETIC, TO-18
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