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Part Datasheet Search > Phototransistor > Vishay Semiconductor > BPW85B Datasheet PDF
BPW85B
$ 0.205

BPW85B Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Current Rating
50.0 mA
Case/Package
T-1
Rise/Fall Time
2.3 ns
Number of Channels
1 Channel
Number of Positions
2 Position
Wavelength
850 nm
Viewing Angle
25°
Peak Wavelength
850 nm
Polarity
NPN
Power Dissipation
100 mW
Power Consumption
100 mW
Rise Time
2 µs
Breakdown Voltage (Collector to Emitter)
70 V
Input Power (Max)
100 mW
Fall Time
2.3 µs
Operating Temperature (Max)
100 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
100 mW

BPW85B Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Each
Material
Silicon
Size-Length
3.4 mm
Size-Width
3.4 mm
Size-Height
4.5 mm
Operating Temperature
-40℃ ~ 100℃

BPW85B Documents

Vishay Semiconductor
6 Pages / 0.09 MByte
Vishay Semiconductor
6 Pages / 0.09 MByte

BPW85 Documents

VISHAY
Photodetector Transistors NPN Phototransistor 70V 0.1W(1/10W) 850nm
Vishay Semiconductor
VISHAY BPW85 Phototransistor, 850nm, 50°, 0.1W(1/10W), 2Pins, T-1 (3mm)
Vishay Siliconix
BPW85 +/-25 IR+Visible Light Phototransistor, Through Hole 2Pin 3mm(T-1)package
Vishay Intertechnology
Photo Transistor, 830nm , 0.05A I(C)
ATMEL
Photo Transistor, 850nm
VISHAY
Photodetector Transistors NPN Phototransistor 70V 0.1W(1/10W) 850nm
Vishay Semiconductor
VISHAY BPW85C Phototransistor, 850nm, 25°, 0.1W(1/10W), 2Pins, T-1 (3mm)
VISHAY
Photodetector Transistors NPN Phototransistor 70V 0.1W(1/10W) 850nm
VISHAY
Photodetector Transistors NPN Phototransistor 70V 0.1W(1/10W) 850nm
Vishay Semiconductor
VISHAY BPW85B Phototransistor, 850nm, 25°, 0.1W(1/10W), 2Pins, T-1 (3mm)
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