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Part Datasheet Search > MOSFETs > Diodes > BS107P Datasheet PDF
BS107P
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BS107P Datasheet PDF (5 Pages)
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BS107P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
120 mA
Case/Package
TO-92-3
Drain to Source Resistance (on) (Rds)
30.0 Ω
Polarity
N-Channel
Power Dissipation
0.5 W
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
120 mA
Input Power (Max)
500 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
500 mW

BS107P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
-55℃ ~ 150℃

BS107P Documents

Diodes
5 Pages / 0.63 MByte
Diodes
183 Pages / 0.63 MByte
Diodes
1 Pages / 0.15 MByte

BS107 Documents

ON Semiconductor
MOSFET 200V 250mA
Infineon
Trans MOSFET N-CH 200V 0.13A 3Pin TO-92
Philips
N-channel enhancement mode vertical D-MOS transistor
Diodes
Trans MOSFET N-CH 200V 0.12A 3Pin TO-92
Visay
N-Channel 200V (D-S) MOSFETs
Temic
N-Channel MOS Transistors
ON Semiconductor
MOSFET; N-Ch; VDSS 200VDC; RDS(ON) 14Ω; ID 250mA; TO-92 (TO-226); PD 350mW; -55℃
Diodes
MOSFET N-CH 200V 120mA TO92-3
ON Semiconductor
TO-92 N-CH 200V 0.25A
ON Semiconductor
TO-92 N-CH 200V 0.25A
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