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BS170G Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

MOSFETs

Case Package:

TO-92-3

Description:

MOSFET; N-Ch; VDSS 90VDC; RDS(ON) 1.8Ω; ID 0.5A; TO-92 (TO-226); PD 350mW; -55℃

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Documentation:

BS170G Datasheet (4 Pages)

Pinout Diagram on1 PageHot

Package Outline Dimension on4 Page

Part Numbering System on1 Page 2 Page 4 Page

BS170G Datasheet PDF (4 Pages)

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BS170G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Voltage Rating (DC)

60.0 V

Current Rating

500 mA

Case/Package

TO-92-3

Power Rating

83 W

Number of Channels

1 Channel

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

5 Ω

Polarity

N-Channel

Power Dissipation

350 mW

Threshold Voltage

2 V

Input Capacitance

60.0 pF

Drain to Source Voltage (Vds)

60 V

Breakdown Voltage (Drain to Source)

90 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

500 mA

Input Capacitance (Ciss)

60pF @10V(Vds)

Input Power (Max)

350 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

350mW (Ta)

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BS170G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Box

Size-Length

4.45 mm

Size-Width

4.19 mm

Operating Temperature

-55℃ ~ 150℃

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BS170G Environmental

BS170G Export Classifications

BS170G Function Overview

BS170G Documents

BS170G Datasheet

ON Semiconductor

4 Pages / 0.09 MByte

BS170G Other Datasheet PDF

ON Semiconductor

4 Pages / 0.05 MByte

BS170G Notice File

ON Semiconductor

4 Pages / 0.09 MByte

BS170G Other References

ON Semiconductor

1 Pages / 0.15 MByte

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