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Part Datasheet Search > MOSFETs > Infineon > BSC028N06NSATMA1 Datasheet PDF
BSC028N06NSATMA1
$ 1.403
BSC028N06NSATMA1 Datasheet PDF (9 Pages)
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BSC028N06NSATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
83 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0025 Ω
Polarity
N-Channel
Power Dissipation
83 W
Threshold Voltage
2.8 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
100A
Rise Time
38 ns
Input Capacitance (Ciss)
2700pF @30V(Vds)
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)

BSC028N06NSATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.1 mm
Size-Width
5.15 mm
Size-Height
1.1 mm
Operating Temperature
-55℃ ~ 150℃

BSC028N06NSATMA1 Documents

Infineon
9 Pages / 0.46 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.19 MByte

BSC028N06 Documents

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TDSON N-CH 60V 23A
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TDSON N-CH 60V 100A
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Trans MOSFET N-CH 60V 23A 8Pin TDSON EP
Infineon
MOSFET N-CH 60V 100A TDSON-8
Infineon
Trans MOSFET N-CH 60V 24A
IFC
N-Channel 60V 2.8mΩ Surface Mount OptiMOS™ Power-MOSFET - TDSON-8
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