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Part Datasheet Search > MOSFETs > Infineon > BSC047N08NS3GATMA1 Datasheet PDF
BSC047N08NS3GATMA1
$ 1.238
BSC047N08NS3GATMA1 Datasheet PDF (9 Pages)
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BSC047N08NS3GATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PG-TDSON-8
Power Rating
125 W
Number of Channels
1 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
3.9 mΩ
Polarity
N-Channel
Power Dissipation
125 W
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
80 V
Breakdown Voltage (Drain to Source)
80 V
Continuous Drain Current (Ids)
18A
Rise Time
17 ns
Input Capacitance (Ciss)
3600pF @40V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.5W (Ta), 125W (Tc)

BSC047N08NS3GATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
5.9 mm
Size-Width
5.15 mm
Size-Height
1.27 mm
Operating Temperature
-55℃ ~ 15℃

BSC047N08NS3GATMA1 Documents

Infineon
9 Pages / 0.28 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
416 Pages / 5.83 MByte
Infineon
7 Pages / 0.07 MByte

BSC047N08NS3 Documents

Infineon
TDSON N-CH 80V 18A
Infineon
Trans MOSFET N-CH 80V 18A 8Pin TDSON EP
Infineon
TDSON N-CH 80V 18A
Infineon
TDSON N-CH 80V 18A
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